PRECURSOR FOR PREPARING THE SNS THIN-FILM AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A tin sulfide thin film containing a precursor is provided to obtain a high purity tin sulfide thin film of a single phase through chemical vapor deposition. CONSTITUTION: A precursor for forming a tin sulfide thin film contains a structure of chemical formula 1. The precursor is an asymmetric structure. A method for manufacturing the thin film comprises the step of forming the thin film through deposition of the precursor. The deposition is a chemical vapor deposition.