发明名称 Field effect transistor
摘要 <p>A semiconductor device has a shield plate electrode connected to a source terminal electrode near a drain electrode. The source terminal electrode is arranged between an active region AA and a drain terminal electrode, and a shield plate electrode is connected to the source terminal electrode.</p>
申请公布号 EP2634809(A2) 申请公布日期 2013.09.04
申请号 EP20130156853 申请日期 2013.02.26
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 YAMAURA, TAKUJI
分类号 H01L29/40;H01L29/417;H01L29/423;H01L29/772;H01L29/778 主分类号 H01L29/40
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