发明名称 DIFFUSION AGENT COMPOSITION, METHOD OF FORMING AN IMPURITY DIFFUSION LAYER, AND SOLAR CELL
摘要 The disclosed diffusion agent composition is used in the formation of an impurity diffusion agent layer on a semiconductor substrate, and contains (A) an impurity diffusion component, (B) a silicon compound, and (C) a solvent containing (C1) a solvent with a boiling point of 100C or less, (C2) a solvent with a boiling point of 120-180C, and a (C3) solvent with a boiling point of 240-300C.
申请公布号 KR20130098157(A) 申请公布日期 2013.09.04
申请号 KR20127030239 申请日期 2011.04.12
申请人 TOKYO OHKA KOGYO CO., LTD. 发明人 MUROTA ATSUSHI;HIRAI TAKAAKI
分类号 H01L31/04;H01L21/225;H01L31/18 主分类号 H01L31/04
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