发明名称
摘要 PROBLEM TO BE SOLVED: To provide a new p-type semiconductor using a CZTS-system compound as a base, being low in cost, and having a relatively high conversion efficiency, and to provide a photoelectric element using the same.SOLUTION: A p-type semiconductor has composition represented by a general formula: (CuAg)ZnSnS(here, 0<x&le;0.15, a<b+c, b>c, and a+b+c<d.), and contains a phase having a kesterite structure, and is used for a light absorption layer of a photoelectric element. A photoelectric element using the p-type semiconductor for the light absorption layer is also provided. In the general formula, x is preferably 0.025&le;x&le;0.10.
申请公布号 JP5278418(B2) 申请公布日期 2013.09.04
申请号 JP20100271946 申请日期 2010.12.06
申请人 发明人
分类号 H01L31/04 主分类号 H01L31/04
代理机构 代理人
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