| 摘要 |
<p>The device (100) is an optoelectronic device or transparent waveguide device that comprises a growth surface (222), a growth mask (230), an optical waveguide core mesa (240) and a cladding layer (160). The growth mask (230) is located on the semiconductor surface (222) and defines an elongate growth window (234) having a periodic grating profile (235, 236). The optical waveguide core mesa (240) is located in the growth window (240) and has a trapezoidal cross-sectional shape. The cladding layer (160) covers the optical waveguide core mesa (240) and extends over at least part of the growth mask (230). Such devices are fabricated by providing a wafer (210) comprising a growth surface (222), growing an optical waveguide core mesa (240) on the growth surface (222) by micro-selective area growth at a first growth temperature and covering the optical waveguide core mesa (240) with cladding material (160) at a second growth temperature, lower than the first growth temperature.</p> |
