SINGLE CRYSTAL SILICON INGOT GROWING METHOD, SINGLE CRYSTAL SILICON INGOT, AND EPITAXIAL SILICON WAFER

摘要

PURPOSE: A method for pulling a single crystal silicon ingot, the single crystal silicon ingot, and an epitaxial silicon wafer are provided to sufficiently form a BMD on the single crystal silicon ingot and to conveniently control the concentrations of nitrogen and oxygen. CONSTITUTION: The concentration of nitrogen included in a single crystal silicon ingot pulled in an initial body process is 8 x 10^13 atoms/cm^3 or greater. The concentration of the nitrogen included in the single crystal silicon ingot is increased from the initial body process to a finial body process. The concentration of oxygen included in the single crystal silicon ingot is constantly maintained in the entire body process. The number of BMDs included in the single crystal silicon ingot is between 1 x 10^8 ea/cm^3 and 1 x 10^10 ea/cm^3. The concentration of the oxygen included in the single crystal silicon ingot is 9 to 15 ppma. [Reference numerals] (AA) Concentration; (BB) Oxygen concentration; (CC) Nitrogen concentration; (DD) Body process start; (EE) Development