POLYMER, MAKING METHOD, RESIST COMPOSITION, AND PATTERNING PROCESS

摘要

PURPOSE: A polymer compound is provided to be useful as a base resin for a resist material with excellent line width roughness, masking performance, and high resolution, in a photolithography using high energy rays such as an ArF excimer laser, EUV light, and electromagnetic waves as a light source. CONSTITUTION: A sulfonic acid anion-containing polymer compound has an alkyl sulfonium cation which is not covalently bonded with the polymer compound. A resist material includes the polymer compound. A manufacturing method of the polymer compound includes a step of conduct a reaction between an alkyl sulfonium salt with a polymer compound which contains a metal cation or an ammonium cation not covalently bonded with the polymer compound. A pattern-forming method includes a step of spreading the resist material on a substrate; a step of exposing the resist material to high energy rays after a heat treatment; and a step of developing the resist material by using a developing solution.