| 摘要 |
An insulated gate bipolar transistor, comprising:
a substrate having a first conductivity type;
a drift layer having a second conductivity type opposite the first conductivity type;
a well region in the drift layer and having the first conductivity type;
a epitaxial channel adjustment layer on the drift layer and having the second conductivity type and having a thickness of about 0.25 µm or more;
an emitter region extending from a surface of the epitaxial channel adjustment layer through the epitaxial channel adjustment layer and into the well region, the emitter region having the second conductivity type and at least partially defining a channel region in the well region adjacent to the emitter region;
a gate oxide layer on the channel region; and
a gate on the gate oxide layer. |
