发明名称 |
Method of manufacturing an ultra-high-density capacity comprising pillar-shaped capacitors formed on both sides of a substrate |
摘要 |
<p>The present invention describes an ultra High-Density Capacitor design, integrated in a semiconductor substrate, preferably a Si substrate, by using both wafer sides. The capacitors are pillar-shaped and comprise electrodes (930,950) separated by a dielectric layer (940). Via connections (920) are provided in trenches that go through the whole thickness of the wafer.</p> |
申请公布号 |
EP2255376(B1) |
申请公布日期 |
2013.09.04 |
申请号 |
EP20090712370 |
申请日期 |
2009.02.17 |
申请人 |
NXP B.V. |
发明人 |
NEUILLY, FRANCOIS;LE CORNEC, FRANCOIS |
分类号 |
H01L21/02;H01L21/334;H01L21/768;H01L23/498;H01L27/02;H01L27/06;H01L27/08;H01L29/66;H01L29/94 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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