发明名称 Semiconductor chip and method for manufacturing the same
摘要 <p>The semiconductor chip has a p-doped region with a coating layer (18) and a contact layer (21). Two intermediate layers (19,20) are provided between the coating layer and the contact layer. A concentration of material component is changed in such a manner within two intermediate layers that the bandgap varies within intermediate layer within a range. An independent claim is also included for a method of manufacturing a semiconductor chip.</p>
申请公布号 EP1995836(B1) 申请公布日期 2013.09.04
申请号 EP20080009304 申请日期 2008.05.20
申请人 OSRAM OPTO SEMICONDUCTORS GMBH 发明人 MAYER, BERND, DR.;SCHMID, WOLFGANG, DR.
分类号 H01L29/205;H01L33/02;H01L33/14;H01L33/30;H01S5/30;H01S5/32;H01S5/343 主分类号 H01L29/205
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