发明名称 |
Semiconductor chip and method for manufacturing the same |
摘要 |
<p>The semiconductor chip has a p-doped region with a coating layer (18) and a contact layer (21). Two intermediate layers (19,20) are provided between the coating layer and the contact layer. A concentration of material component is changed in such a manner within two intermediate layers that the bandgap varies within intermediate layer within a range. An independent claim is also included for a method of manufacturing a semiconductor chip.</p> |
申请公布号 |
EP1995836(B1) |
申请公布日期 |
2013.09.04 |
申请号 |
EP20080009304 |
申请日期 |
2008.05.20 |
申请人 |
OSRAM OPTO SEMICONDUCTORS GMBH |
发明人 |
MAYER, BERND, DR.;SCHMID, WOLFGANG, DR. |
分类号 |
H01L29/205;H01L33/02;H01L33/14;H01L33/30;H01S5/30;H01S5/32;H01S5/343 |
主分类号 |
H01L29/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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