| 摘要 |
Disclosed is a method of manufacturing a GaN-based material having high thermal conductivity. A gallium nitride-based material is grown by HVPE (Hydride Vapor Phase Epitaxial Growth) by supplying a carrier gas (G1) containing H 2 gas, GaCl gas (G2), and NH 3 gas (G3) to a reaction chamber (10), and setting the growth temperature at 900 (°C) (inclusive) to 1,200 (°C) (inclusive), the growth pressure at 8.08 × 10 4 (Pa) (inclusive) to 1.21 × 10 5 (Pa) (inclusive), the partial pressure of the GaCl gas (G2) at 1.0 × 10 4 (Pa) (inclusive) to 1.0 × 10 4 (Pa) (inclusive), and the partial pressure of the NH 3 gas (G3) at 9.1 × 10 2 (Pa) (inclusive) to 2.0 × 10 4 (Pa) (inclusive).
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