发明名称 Phase change memory word line driver
摘要 A method for improving sub-word line response comprises generating a variable substrate bias determined by at least one user parameter. The variable substrate bias is applied to a sub-word line driver in a selected sub-block of a memory. A voltage disturbance on a sub-word line in communication with the sub-word line driver is minimized by modifying a variable substrate bias of the sub-word line driver to change a transconductance of the sub-word line driver thereby.
申请公布号 US8526227(B2) 申请公布日期 2013.09.03
申请号 US201113110399 申请日期 2011.05.18
申请人 PYEON HONG BEOM;MOSAID TECHNOLOGIES INCORPORATED 发明人 PYEON HONG BEOM
分类号 G11C11/00 主分类号 G11C11/00
代理机构 代理人
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