发明名称 |
Complementary read-only memory (ROM) cell and method for manufacturing the same |
摘要 |
A complementary read-only memory (ROM) cell includes a transistor; and a bit line and a complementary bit line adjacent to the transistor; wherein a drain terminal of the transistor is connected to one of the bit line and the complementary bit line based on data programmed in the ROM cell.
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申请公布号 |
US8526209(B2) |
申请公布日期 |
2013.09.03 |
申请号 |
US201113168609 |
申请日期 |
2011.06.24 |
申请人 |
DASANI JITENDRA;STMICROELECTRONICS INTERNATIONAL N.V. |
发明人 |
DASANI JITENDRA |
分类号 |
G11C17/00 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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