发明名称 |
Measuring floating body voltage in silicon-on-insulator (SOI) metal-oxide-semiconductor-field-effect-transistor (MOSFET) |
摘要 |
In one embodiment, a body region of a body-contacted silicon-on-insulator (SOI) metal-oxide-semiconductor-field-effect-transistor (MOSFET) is connected to a gate of another MOSFET in a sensing circuit to form a floating body node. The voltage at the floating body node is accurately obtained at the output of the sensing circuit and used to provide an estimate of required floating body voltage over a full device operating range.
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申请公布号 |
US8524513(B2) |
申请公布日期 |
2013.09.03 |
申请号 |
US201313770405 |
申请日期 |
2013.02.19 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
KHANDELWAL SOURABH;WATTS JOSEF S. |
分类号 |
H01L31/109 |
主分类号 |
H01L31/109 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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