发明名称 |
Process for forming a planar diode using one mask |
摘要 |
A planar diode and method of making the same employing only one mask. The diode is formed by coating a substrate with an oxide, removing a central portion of the oxide to define a window through which dopants are diffused. The substrate is given a Ni/Au plating to provide ohmic contact surfaces, and the oxide on the periphery of the window is coated with a polyimide passivating agent overlying the P/N junction.
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申请公布号 |
US8525222(B2) |
申请公布日期 |
2013.09.03 |
申请号 |
US20050090708 |
申请日期 |
2005.03.25 |
申请人 |
WANG BENSON;LU KEVIN;CHIANG WARREN;CHEN MAX;VISHAY GENERAL SEMICONDUCTOR LLC |
发明人 |
WANG BENSON;LU KEVIN;CHIANG WARREN;CHEN MAX |
分类号 |
H01L29/00 |
主分类号 |
H01L29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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