| 摘要 |
PURPOSE: A method for forming the lines of a semiconductor memory device and a structure thereof are provided to improve signal properties by equalizing the properties of specific signals transmitted through lines. CONSTITUTION: Identical circuit blocks (100,106) are formed. Each line (112,116) has the same length and breadth. Specific signals are transmitted to each circuit block through each line. A contact (114,118) is formed in the same region within each circuit block. Each line is connected to each circuit block through the contact. [Reference numerals] (AA) A signal; (BB) B signal; (CC) C signal |
