发明名称 APPARATUS FOR PROCESSING SUBSTRATE AND METHOD FOR PROCESSING SUBSTRATE USING THE SAME
摘要 PURPOSE: An apparatus for processing a substrate and a method for processing the substrate using the same are provided to prevent damage to the substrate due to plasma by spraying plasma gas onto the substrate. CONSTITUTION: A substrate support part (120) is installed in a process chamber. The substrate support part supports at least one substrate. A chamber lid (115) covers the upper part of the process chamber. A gas injection part (130) is installed around the chamber lid. The gas injection part faces the substrate support part locally.
申请公布号 KR20130097425(A) 申请公布日期 2013.09.03
申请号 KR20120019065 申请日期 2012.02.24
申请人 JUSUNG ENGINEERING CO., LTD. 发明人 HAN, JEUNG HOON;LEE, SANG DON
分类号 H01L21/205 主分类号 H01L21/205
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