发明名称 |
APPARATUS FOR PROCESSING SUBSTRATE AND METHOD FOR PROCESSING SUBSTRATE USING THE SAME |
摘要 |
PURPOSE: An apparatus for processing a substrate and a method for processing the substrate using the same are provided to prevent damage to the substrate due to plasma by spraying plasma gas onto the substrate. CONSTITUTION: A substrate support part (120) is installed in a process chamber. The substrate support part supports at least one substrate. A chamber lid (115) covers the upper part of the process chamber. A gas injection part (130) is installed around the chamber lid. The gas injection part faces the substrate support part locally. |
申请公布号 |
KR20130097425(A) |
申请公布日期 |
2013.09.03 |
申请号 |
KR20120019065 |
申请日期 |
2012.02.24 |
申请人 |
JUSUNG ENGINEERING CO., LTD. |
发明人 |
HAN, JEUNG HOON;LEE, SANG DON |
分类号 |
H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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