SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

PURPOSE: A semiconductor light emitting device is provided to improve luminous efficiency by enhancing the electron injection efficiency of an active layer. CONSTITUTION: An active layer (40) is arranged between an n-type and a p-type semiconductor layer. The active layer has a lamination structure which is formed by laminating quantum well layers and quantum barrier layers once or more times. A super lattice layer (50) has a lamination structure which is formed by laminating first layers and second layers two or more times. The first layer has first band gap energy. The second layer has second band gap energy that is lower than the first band gap energy.