发明名称 |
Array of magnetic tunneling junction film structures with process determined in-plane magnetic anisotropy |
摘要 |
An MRAM array of MTJ memory cells is provided wherein each such cell is a layered MTJ structure located at an intersection of a word and bit line and has a small circular horizontal cross-section of 1.0 microns or less in diameter and wherein the ferromagnetic free layer of each such cell has a magnetic anisotropy produced by a magnetic coupling with a thin antiferromagnetic layer that is formed on the free layer. The array of MTJ memory cells so provided is far less sensitive to shape irregularities and edge defects of individual cells than arrays of the prior art.
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申请公布号 |
US8525280(B2) |
申请公布日期 |
2013.09.03 |
申请号 |
US201113136194 |
申请日期 |
2011.07.26 |
申请人 |
MIN TAI;HORNG CHENG;WANG PO KANG;HEADWAY TECHNOLOGIES, INC. |
发明人 |
MIN TAI;HORNG CHENG;WANG PO KANG |
分类号 |
H01L27/105;H01L29/82;G11C11/14;G11C11/15;G11C11/16;H01L21/8246;H01L27/22;H01L31/062;H01L43/08;H01L43/10;H01L43/12 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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