| 摘要 |
<p>A driving stage for a phase change non-volatile memory device may have an output driving unit which supplies an output driving current during an operation of programming of at least one memory cell. A driving-control unit receives an input current and generates at output a first control signal that controls supply of the output driving current by the output driving unit in such a way that a value of this current has a desired relation with the input current. A level-shifter element, set between the output of the driving-control unit and a control input of the output driving unit, determines a level shift of the voltage of the first control signal so as to supply to the control input of the output driving unit a second control signal, having a voltage value that is increased with respect to, and is a function of, the first control signal.</p> |
