发明名称 Semiconductor device
摘要 A semiconductor device includes a plurality of electrodes arranged on a compound semiconductor layer grown on a substrate, and a surface protection film that protects a surface of a semiconductor layer on the compound semiconductor layer between the electrodes. A refractive index of the surface protection film is controlled so that a stress caused by the surface protection film on the surface of the semiconductor layer is minimized.
申请公布号 US8525225(B2) 申请公布日期 2013.09.03
申请号 US20060511293 申请日期 2006.08.29
申请人 KAMBAYASHI HIROSHI;IKEDA NARIAKI;YOSHIDA SEIKOH;THE FURUKAWA ELECTRIC CO., LTD. 发明人 KAMBAYASHI HIROSHI;IKEDA NARIAKI;YOSHIDA SEIKOH
分类号 H01L29/739 主分类号 H01L29/739
代理机构 代理人
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