A semiconductor device includes a plurality of electrodes arranged on a compound semiconductor layer grown on a substrate, and a surface protection film that protects a surface of a semiconductor layer on the compound semiconductor layer between the electrodes. A refractive index of the surface protection film is controlled so that a stress caused by the surface protection film on the surface of the semiconductor layer is minimized.
申请公布号
US8525225(B2)
申请公布日期
2013.09.03
申请号
US20060511293
申请日期
2006.08.29
申请人
KAMBAYASHI HIROSHI;IKEDA NARIAKI;YOSHIDA SEIKOH;THE FURUKAWA ELECTRIC CO., LTD.