发明名称 |
Device and method for forming Fins in integrated circuitry |
摘要 |
A semiconductor FinFET device includes a plurality of gate lines formed in a first direction, and two types of fin structures. A first type of fin structures is formed in a second direction, and a second type of fin structures formed perpendicular to the first type of fin structures. A contact hole couples to one or more of the second type of fin structures.
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申请公布号 |
US8525267(B2) |
申请公布日期 |
2013.09.03 |
申请号 |
US20100953148 |
申请日期 |
2010.11.23 |
申请人 |
WANG CHIEN-HSUN;CHANG CHIH-SHENG;LIN YI-TANG;SHIEH MING-FENG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
WANG CHIEN-HSUN;CHANG CHIH-SHENG;LIN YI-TANG;SHIEH MING-FENG |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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