Structure including voltage controlled negative resistance

摘要

Aspects of the invention provide a semiconductor tunneling device including voltage controlled negative resistance. In one embodiment, the semiconductor tunneling device includes: at least one pair of spaced apart terminals; an inter-level dielectric (ILD) layer between the at least one pair of spaced apart terminals; and a dielectric capping layer extending continuously over the at least one pair of spaced apart terminals and the ILD layer.