| 摘要 |
PURPOSE: An organic field effect transistor and a manufacturing method thereof are provided to improve charge mobility by minimizing a step between an organic semiconductor channel layer and plastic materials. CONSTITUTION: A single layer graphene(120) is formed on a metal catalyst thin film(110) for growing a graphene. A patterned single layer graphene electrode(140) is formed by patterning the single layer graphene. The single layer graphene electrode includes a single layer graphene source electrode and a single layer graphene drain electrode. The patterned single layer graphene electrode is transferred on plastic materials(150). An organic semiconductor channel layer(160) is formed on the plastic materials. |
