发明名称 Process for preparing thin layers of nanoporous dielectric materials
摘要 A process for preparing a thin layer of a nanoporous dielectric material with homogeneous porosity is provided. The method includes depositing a first thin layer of an oxygen-free material onto a substrate. A second thin layer of a second material is deposited onto the first layer. The first layer and second layer assembly are treated under conditions so that a gas is generated in the first layer by foaming, leading to the creation of nanopores in the first layer. The second thin layer will not form a gas during this treatment and will have a sufficient density to limit or prevent the spread and/or diffusion of the gas generated in the first layer. The second thin layer may be removed.
申请公布号 US8524332(B2) 申请公布日期 2013.09.03
申请号 US20080176119 申请日期 2008.07.18
申请人 JOUSSEAUME VINCENT;COMMISSARIAT A L'ENERGIE ATOMIQUE 发明人 JOUSSEAUME VINCENT
分类号 H05H1/24;B05D3/02;B05D5/00;B05D5/06;H05B6/02;H05B6/46 主分类号 H05H1/24
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