发明名称 |
Process for preparing thin layers of nanoporous dielectric materials |
摘要 |
A process for preparing a thin layer of a nanoporous dielectric material with homogeneous porosity is provided. The method includes depositing a first thin layer of an oxygen-free material onto a substrate. A second thin layer of a second material is deposited onto the first layer. The first layer and second layer assembly are treated under conditions so that a gas is generated in the first layer by foaming, leading to the creation of nanopores in the first layer. The second thin layer will not form a gas during this treatment and will have a sufficient density to limit or prevent the spread and/or diffusion of the gas generated in the first layer. The second thin layer may be removed.
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申请公布号 |
US8524332(B2) |
申请公布日期 |
2013.09.03 |
申请号 |
US20080176119 |
申请日期 |
2008.07.18 |
申请人 |
JOUSSEAUME VINCENT;COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
JOUSSEAUME VINCENT |
分类号 |
H05H1/24;B05D3/02;B05D5/00;B05D5/06;H05B6/02;H05B6/46 |
主分类号 |
H05H1/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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