发明名称 |
Method of making wafer structure for backside illuminated color image sensor |
摘要 |
An integrated circuit device is provided. The integrated circuit device can include a substrate; a first radiation-sensing element disposed over a first portion of the substrate; and a second radiation-sensing element disposed over a second portion of the substrate. The first portion comprises a first radiation absorption characteristic, and the second portion comprises a second radiation absorption characteristic different from the first radiation absorption characteristic.
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申请公布号 |
US8525286(B2) |
申请公布日期 |
2013.09.03 |
申请号 |
US20090537167 |
申请日期 |
2009.08.06 |
申请人 |
HSU TZU-HSUAN;HSIEH CHRIS;YAUNG DUN-NIAN;YU CHUNG-YI;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
HSU TZU-HSUAN;HSIEH CHRIS;YAUNG DUN-NIAN;YU CHUNG-YI |
分类号 |
H01L31/00 |
主分类号 |
H01L31/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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