A substrate processing chamber for processing a plurality of wafers in batch mode. In one embodiment the chamber includes a vertically aligned housing having first and second processing areas separated by an internal divider, the first processing area positioned directly over the second processing area; a multi-zone heater operatively coupled to the housing to heat the first and second processing areas independent of each other; a wafer transport adapted to hold a plurality of wafers within the processing chamber and move vertically between the first and second processing areas; a gas distribution system adapted to introduce ozone into the second area and steam into the first processing area; and a gas exhaust system configured to exhaust gases introduced into the first and second processing areas.
申请公布号
US8524004(B2)
申请公布日期
2013.09.03
申请号
US201113161371
申请日期
2011.06.15
申请人
LUBOMIRSKY DMITRY;PINSON, II JAY D.;FLOYD KIRBY H.;KHAN ADIB;VENKATARAMAN SHANKAR;APPLIED MATERIALS, INC.
发明人
LUBOMIRSKY DMITRY;PINSON, II JAY D.;FLOYD KIRBY H.;KHAN ADIB;VENKATARAMAN SHANKAR