发明名称 |
LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
A semiconductor light emitting device includes a conductive substrate, a light emitting structure, a first contact layer, a conductive via and a current interruption region. The light emitting structure is disposed on the conductive substrate and includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. The first contact layer is disposed between the conductive substrate and the first conductive semiconductor layer. The conductive via is disposed to extend from the conductive substrate to be connected to the second conductive semiconductor layer. The current interruption region is disposed in a region adjacent to the conductive via in the light emitting structure.
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申请公布号 |
KR20130097363(A) |
申请公布日期 |
2013.09.03 |
申请号 |
KR20120018964 |
申请日期 |
2012.02.24 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, BUM JOON;KIM, YOUNG SUN;YOON, SUK HO;KIM, KI SUNG;SHIN, DONG CHUL |
分类号 |
H01L33/36;H01L33/12;H01L33/20;H01L33/22 |
主分类号 |
H01L33/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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