发明名称 |
Semiconductor structure with improved channel stack and method for fabrication thereof |
摘要 |
A method for fabricating a semiconductor structure with a channel stack includes forming a screening layer under a gate of a PMOS transistor element and a NMOS transistor element, forming a threshold voltage control layer on the screening layer, and forming an epitaxial channel layer on the threshold control layer. At least a portion of the epitaxial channel layers for the PMOS transistor element and the NMOS transistor element are formed as a common blanket layer. The screening layer for the PMOS transistor element may include antimony as a dopant material that may be inserted into the structure prior to or after formation of the epitaxial channel layer.
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申请公布号 |
US8525271(B2) |
申请公布日期 |
2013.09.03 |
申请号 |
US201113039986 |
申请日期 |
2011.03.03 |
申请人 |
GREGORY PAUL E.;SHIFREN LUCIAN;RANADE PUSHKAR;SUVOLTA, INC. |
发明人 |
GREGORY PAUL E.;SHIFREN LUCIAN;RANADE PUSHKAR |
分类号 |
H01L21/70 |
主分类号 |
H01L21/70 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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