| 摘要 |
An electrostatic discharge (ESD) protection circuit, suitable for an input stage circuit including a first N channel metal oxide semiconductor (NMOS) transistor, is provided. The ESD protection circuit includes an P channel metal oxide semiconductor (PMOS) transistor and an impedance device, in which the PMOS transistor has a source coupled to a gate of the first NMOS transistor, and a drain coupled to a source of the first NMOS transistor, and the impedance device is coupled between a gate of the PMOS transistor and a first power rail to perform a initial-on ESD protection circuit. The ESD protection circuit formed by the PMOS transistor and the resistor is capable of increasing the turn-on speed of the ESD protection circuit and preventing the input stage circuit from a CDM ESD event.
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