发明名称 |
Schottky diode with improved high current behavior |
摘要 |
In the diffusion region (3) of the second conductivity mode, a more highly doped region of the same conductivity mode (5) is introduced in such a manner that the region of the first conductivity mode (2) which is covered by the metal silicide (9) and of the second conductivity mode (3) are connected in a conductive manner. The region (3) of the second conductivity mode is diffused in such a manner that it reaches the more highly doped region (1) of the first doping type (1), with an outward diffusion of the doping from the more highly doped substrate layer (1) into the more weakly doped layer (2) of the same conductivity mode in the direction of the semiconductor surface taking place at the same time.
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申请公布号 |
US8525288(B2) |
申请公布日期 |
2013.09.03 |
申请号 |
US20100762844 |
申请日期 |
2010.04.19 |
申请人 |
RESCHKE MICHAEL;HILLEMANN HANS-JURGEN;GUNTHER KLAUS;ERIS TECHNOLOGY CORPORATION |
发明人 |
RESCHKE MICHAEL;HILLEMANN HANS-JURGEN;GUNTHER KLAUS |
分类号 |
H01L29/872 |
主分类号 |
H01L29/872 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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