发明名称 |
Non-volatile variable resistance memory device and method of fabricating the same |
摘要 |
A non-volatile variable resistance memory device and a method of fabricating the same are provided. The non-volatile variable resistance memory device may include a lower electrode, a buffer layer on the lower electrode, an oxide layer on the buffer layer and an upper electrode on the oxide layer. The buffer layer may be composed of an oxide and the oxide layer may have variable resistance characteristics.
|
申请公布号 |
US8525142(B2) |
申请公布日期 |
2013.09.03 |
申请号 |
US20070797519 |
申请日期 |
2007.05.04 |
申请人 |
BOURIM EL MOSTAFA;LEE EUN-HONG;CHO CHOONG-RAE;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
BOURIM EL MOSTAFA;LEE EUN-HONG;CHO CHOONG-RAE |
分类号 |
H01L29/02 |
主分类号 |
H01L29/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|