发明名称 SEMICONDUCTOR CHIP WITH REDUNDANT THRU-SILICON-VIAS
摘要 A semiconductor chip with conductive vias and a method of manufacturing the same are disclosed. The method includes forming a first plurality of conductive vias in a layer of a first semiconductor chip. The first plurality of conductive vias includes first ends and second ends. A first conductor pad is formed in ohmic contact with the first ends of the first plurality of conductive vias.
申请公布号 KR20130097766(A) 申请公布日期 2013.09.03
申请号 KR20137007011 申请日期 2011.09.09
申请人 ADVANCED MICRO DEVICES, INC.;ATI TECHNOLOGIES ULC 发明人 BLACK BRYAN;SU MICHAEL Z.;REFAI AHMED GAMAL;SIEGEL JOE;PREJEAN SETH
分类号 H01L23/48 主分类号 H01L23/48
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