发明名称 |
SEMICONDUCTOR CHIP WITH REDUNDANT THRU-SILICON-VIAS |
摘要 |
A semiconductor chip with conductive vias and a method of manufacturing the same are disclosed. The method includes forming a first plurality of conductive vias in a layer of a first semiconductor chip. The first plurality of conductive vias includes first ends and second ends. A first conductor pad is formed in ohmic contact with the first ends of the first plurality of conductive vias. |
申请公布号 |
KR20130097766(A) |
申请公布日期 |
2013.09.03 |
申请号 |
KR20137007011 |
申请日期 |
2011.09.09 |
申请人 |
ADVANCED MICRO DEVICES, INC.;ATI TECHNOLOGIES ULC |
发明人 |
BLACK BRYAN;SU MICHAEL Z.;REFAI AHMED GAMAL;SIEGEL JOE;PREJEAN SETH |
分类号 |
H01L23/48 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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