| 摘要 |
A method includes transferring a raw silicon material in a crucible and subjecting the raw silicon material in the crucible to thermal energy to form a melted silicon material at a temperature of less than 1400 Degrees Celsius, the melted silicon material having an exposed region bounded by an interior region of the crucible, subjecting an exposed inner region of the melted silicon material to an energy source to include an arc heater configured above the exposed region and to be spaced by a gap between the exposed region and a muzzle region of the arc heater to form a determined temperature profile within a vicinity of an inner region of the exposed melted silicon material while maintaining outer regions of the melted silicon material at a temperature below a melting point of the crucible, and removing impurities from the melted silicon material to form higher purity silicon.
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