发明名称 |
Post deposition treatments for CVD cobalt films |
摘要 |
Embodiments of the invention provide methods for forming materials on a substrate used for metal gate and other applications. In one embodiment, a method includes forming a cobalt stack over a barrier layer disposed on a substrate by depositing a cobalt layer during a deposition process, exposing the cobalt layer to a plasma to form a plasma-treated cobalt layer during a plasma process, and repeating the cobalt deposition process and the plasma process to form the cobalt stack containing a plurality of plasma-treated cobalt layers. The method further includes exposing the cobalt stack to an oxygen source gas to form a cobalt oxide layer from an upper portion of the cobalt stack during a surface oxidation process and heating the remaining portion of the cobalt stack to a temperature within a range from about 300° C. to about 500° C. to form a crystalline cobalt film during a thermal annealing crystallization process.
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申请公布号 |
US8524600(B2) |
申请公布日期 |
2013.09.03 |
申请号 |
US201113174692 |
申请日期 |
2011.06.30 |
申请人 |
LEI YU;FU XINYU;SUBRAMANI ANANTHA;GANGULI SESHADRI;GANDIKOTA SRINIVAS;APPLIED MATERIALS, INC. |
发明人 |
LEI YU;FU XINYU;SUBRAMANI ANANTHA;GANGULI SESHADRI;GANDIKOTA SRINIVAS |
分类号 |
H01L21/283;B82Y40/00 |
主分类号 |
H01L21/283 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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