发明名称 Heat Shield for Manufacturing Single Crystal Ingot, Single Crystal Ingot Grower including the same and Method for removing a contaminant of Heat Shield for Manufacturing Single Crystal Ingot
摘要 PURPOSE: A heat shield for growing a single crystal ingot, a single crystal ingot growing device, and a method for removing the contamination of the heat shield are provided to efficiently remove oxide by adopting a structure to separate a side ring from a body. CONSTITUTION: A heat shield(150) is formed in a single crystal growing device chamber(110). A side ring(157) is arranged in a body(155). The side ring is attached to or detached from the body. The body is arranged between heaters(130).
申请公布号 KR101303519(B1) 申请公布日期 2013.09.03
申请号 KR20110024740 申请日期 2011.03.21
申请人 发明人
分类号 C30B15/00;C30B29/06;H01L21/02 主分类号 C30B15/00
代理机构 代理人
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