发明名称 |
Heat Shield for Manufacturing Single Crystal Ingot, Single Crystal Ingot Grower including the same and Method for removing a contaminant of Heat Shield for Manufacturing Single Crystal Ingot |
摘要 |
PURPOSE: A heat shield for growing a single crystal ingot, a single crystal ingot growing device, and a method for removing the contamination of the heat shield are provided to efficiently remove oxide by adopting a structure to separate a side ring from a body. CONSTITUTION: A heat shield(150) is formed in a single crystal growing device chamber(110). A side ring(157) is arranged in a body(155). The side ring is attached to or detached from the body. The body is arranged between heaters(130). |
申请公布号 |
KR101303519(B1) |
申请公布日期 |
2013.09.03 |
申请号 |
KR20110024740 |
申请日期 |
2011.03.21 |
申请人 |
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发明人 |
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分类号 |
C30B15/00;C30B29/06;H01L21/02 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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