| 摘要 |
PROBLEM TO BE SOLVED: To provide an SOI wafer that includes cavity patterns 3 therein and enables positioning of an exposure mask at low costs when exposure is performed on the SOI wafer.SOLUTION: An SOI wafer according to this invention includes: a support substrate 1; and an insulation layer 2 formed on the support substrate 1. Predetermined cavity patterns 3 are formed on one major surface of the support substrate 1 where the insulation layer 2 is formed, and the SOI wafer further includes an active semiconductor layer 5 that is formed on the insulation layer 2 closing the cavity patterns 3. The active semiconductor layer 5 is not formed at an outer periphery part of the support substrate 1, and the SOI substrate further includes multiple overlapping mark patterns 4 that are formed at the peripheral part on the one main surface side of the support substrate 1 and specify positions of the cavity patterns 3. |
