| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device and a manufacturing method of the same which can improve voltage withstanding by reducing a field intensity at a gate insulation film.SOLUTION: A silicon carbide semiconductor device 10 comprises an epitaxial layer 1, a gate insulation film 6, a gate electrode 2, a drain electrode 3 and a source electrode 5. The epitaxial layer 1 is composed of a silicon carbide; has a first principal surface 11 and a second principal surface 12; and includes a mesa structure region 4 having a top face 11 which forms the first principal surface and lateral faces 7. The gate insulation film 6 is provided on the top face 11 of the mesa structure region 4. The gate electrode 2 is provided on the gate insulation film 6. The mesa structure region 4 includes a first impurity region 21, a second impurity region 22 and a third impurity region 23. The drain electrode 3 is provided on the second principal surface 12. The source electrode 5 contacts the third impurity region 23. |
