| 摘要 |
PROBLEM TO BE SOLVED: To provide a method capable of producing an epitaxial silicon carbide wafer having a high-quality silicon carbide single crystal thin film with few surface defects or the like even on a silicon carbide single crystal substrate having a small off-angle.SOLUTION: In a method for producing an epitaxial silicon carbide wafer including a device operation layer by epitaxially growing silicon carbide by a CVD method on a silicon carbide single crystal substrate, silicon carbide is once epitaxially grown on the silicon carbide single crystal substrate to form an initial epitaxially-grown layer, and then epitaxial growth is discontinued, and at least the initial epitaxially-grown layer is etched and removed, and silicon carbide is epitaxially grown again, to thereby form the device operation layer. |
