发明名称 NANO-PIEZOELECTRIC GENERATOR AND METHOD OF MANUFACTURING THE SAME
摘要 <p>PURPOSE: A nanopiezoelectric generator and a method for manufacturing the same are provided to improve a piezoelectric effect by forming an insertion structure between a semiconductor piezoelectric material and an interlayer consisting of an insulating material. CONSTITUTION: At least one nanopiezoelectric part (140) is formed between a first electrode (120) and a second electrode (150). The nanopiezoelectric part consists of a semiconductor piezoelectric material. The nanopiezoelectric part has a nanostructure. An interlayer (130) is formed between the first electrode and the nanopiezoelectric part. The interlayer consists of an insulating material.</p>
申请公布号 KR20130096992(A) 申请公布日期 2013.09.02
申请号 KR20120018655 申请日期 2012.02.23
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SOHN, JUNG INN;CHA, SEUNG NAM
分类号 H01L41/02;H01L41/22 主分类号 H01L41/02
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