发明名称 |
NANO-PIEZOELECTRIC GENERATOR AND METHOD OF MANUFACTURING THE SAME |
摘要 |
<p>PURPOSE: A nanopiezoelectric generator and a method for manufacturing the same are provided to improve a piezoelectric effect by forming an insertion structure between a semiconductor piezoelectric material and an interlayer consisting of an insulating material. CONSTITUTION: At least one nanopiezoelectric part (140) is formed between a first electrode (120) and a second electrode (150). The nanopiezoelectric part consists of a semiconductor piezoelectric material. The nanopiezoelectric part has a nanostructure. An interlayer (130) is formed between the first electrode and the nanopiezoelectric part. The interlayer consists of an insulating material.</p> |
申请公布号 |
KR20130096992(A) |
申请公布日期 |
2013.09.02 |
申请号 |
KR20120018655 |
申请日期 |
2012.02.23 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SOHN, JUNG INN;CHA, SEUNG NAM |
分类号 |
H01L41/02;H01L41/22 |
主分类号 |
H01L41/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|