| 摘要 |
PROBLEM TO BE SOLVED: To provide a power semiconductor module using a sealing material suitable for both a temperature in the vicinity of an element of the power semiconductor module using silicon carbide and gallium nitride, and a temperature of an outer peripheral part.SOLUTION: The power semiconductor module comprises: an insulating layer; a copper base substrate having a first copper block and a second copper block respectively adhered to one surface and the other surface of the insulating layer; at least one power semiconductor element whose one surface is adhered onto the first copper block, and that uses silicon carbide or gallium nitride; a printed board arranged so as to be opposed to the power semiconductor element; a first sealing material at least arranged between the power semiconductor element and the printed board; and a second sealing material arranged so as to cover the outer periphery of the first sealing material and the copper base substrate. The first sealing material is a silicon-based sealing material, and the second sealing material is an epoxy-based sealing material. |
