| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method and a semiconductor device, which increase an integration degree without securing alignment accuracy of a mask.SOLUTION: A semiconductor device manufacturing method comprises: forming a first layer polysilicon 12-1 which composes a gate electrode 7 of a transistor on a whole area; implanting, without using a mask, an ion 13 which becomes an N-type impurity into the first layer polysilicon 12-1 formed on the whole area; forming a second layer polysilicon 12-2 which composes an anode electrode 10 of a diode on a whole area; and implanting, without using a mask, an ion 14 which becomes a P-type impurity into the second layer polysilicon 12-2 formed on the whole area. |
