| 摘要 |
PROBLEM TO BE SOLVED: To solve such a problem of a conventional DRAM that device isolation of a semiconductor is required, and deterioration of an etching end face in association with device isolation has an adverse effect on transistor characteristics, especially when a film-like semiconductor is used, and to provide semiconductor memory device not requiring device isolation for individual memory cells.SOLUTION: A circuit in which one electrode of a capacitor is connected with a bit line, the other electrode is connected with a drain electrode of a transistor having a source electrode connected with a source line, and the other electrode of a capacitor is a part of the bit line is used. Furthermore, a gate electrode is provided to cover a semiconductor and overlap a closed curve or a polygon so as to separate the semiconductor into a source and a drain. In this structure, device isolation is possible by the gate electrode without etching the semiconductor. Since the source line may have a common potential by using an impurity region formed on a semiconductor substrate or an interconnection parallel with a word line, the structure is simplified. |
