| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor element capable of joining a semiconductor wafer and a support substrate at a low temperature and with less void through uniform bonding, preventing occurrence of warpage or breaking of the joined semiconductor wafer and support substrate, and improving productivity and reliability of the semiconductor element.SOLUTION: A method for manufacturing a semiconductor element includes the steps of: forming an element structure layer 13 including a semiconductor layer on a growth substrate 11; forming a first junction layer 15 on the element structure layer; forming a second junction layer 21 composed of the same material as the first junction layer on a support substrate 17; thermally compressing the first junction layer and the second junction layer while facing each other and joining the first junction layer and the second junction layer while maintaining a junction interface between the first junction layer and the second junction layer (first processing step); and eliminating the junction interface by heating the first junction layer and the second junction layer (second processing step). A rough surface having a plurality of conical protrusions 21A is formed on a surface of either of the first junction layer and the second junction layer. |
