SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a vertical Gan-based semiconductor device having an improved breakdown voltage performance and a manufacturing method thereof.SOLUTION: The vertical Gan-based semiconductor device includes: a regrown layer 27 where a channel of a wall surface of an aperture part 28 is formed; a gate electrode G; a side part aperture 38 which is located on both sides of the aperture part or around the aperture part and reaches the inside of an n-type GaN-based drift layer 4; and a source electrode S which is electrically connected to the channel and is located on both side of the aperture part or around the aperture part so as to cover the side part aperture. The side part aperture 38 is provided with a connection structure 5 for conductive connection of the source electrode S to a p-type GaN-based barrier layer and insulation of the source electrode from the n-type GaN-based drift layer.