发明名称 SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND METHOD OF CHANGING SUBSTRATE TEMPERATURE SETTABLE BAND
摘要 PROBLEM TO BE SOLVED: To provide a substrate processing apparatus capable of alleviating restriction on a temperature adjustment range of a substrate with a simple configuration, a substrate processing method, and a method of changing a substrate temperature settable band.SOLUTION: A substrate processing apparatus includes a processing container 12, a base 14, an electrostatic chuck 50, a chiller 99, a first channel 94, a second channel 95, a bypass channel 96, and a flow rate adjustment valve 98. The first channel 94 connects the chiller 99 and a refrigerant inlet of the base 14. The second channel 95 connects the chiller 99 and a refrigerant outlet of the base 14. The bypass channel 96 branches from the middle of the first channel 94, and is connected to the middle of the second channel 95. The flow rate adjustment valve 98 controls the flow rate of the refrigerant flowing into the bypass channel 96.
申请公布号 JP2013172013(A) 申请公布日期 2013.09.02
申请号 JP20120035308 申请日期 2012.02.21
申请人 TOKYO ELECTRON LTD 发明人 MAKABE AKIYUKI;OKASHIRO TAKETOSHI
分类号 H01L21/683;B23Q3/15;H01L21/3065;H02N13/00 主分类号 H01L21/683
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