| 摘要 |
PROBLEM TO BE SOLVED: To improve voltage-withstanding and reliability of a semiconductor device having a field plate structure.SOLUTION: A field plate part of a semiconductor device comprises: an insulating film formed on a surface of a semiconductor substrate; a plurality of first conductive layers formed inside of insulating films every FLR layer, and arranged along a corresponding FLR layer when the semiconductor device is viewed from the top; and a plurality of second conductive films having a surface part formed corresponding to a plurality of FLR layers respectively, arranged along the corresponding FLR layer when the semiconductor device is viewed from the top, and formed on a surface of the insulating film, and a contact part extending from the surface part through the insulating film and electrically connected to first conductive layers and the corresponding FLR layer. At least one part of the surface part of at least one of second conductive film, extends to a position where the one part is overlapped with the first conductive film electrically connected to other adjacent second conductive film in a second direction when the semiconductor device is viewed from the top. |
