发明名称 SURFACE ROUGHENING METHOD OF SINGLE CRYSTAL SILICON SUBSTRATE AND MANUFACTURING METHOD OF PHOTOVOLTAIC DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a surface roughening method of a single crystal silicon substrate capable of fabricating an uneven structure inexpensively, and to provide a manufacturing method of a photovoltaic device.SOLUTION: A surface roughening method of a single crystal silicon substrate includes a first step for coating one surface of a single crystal silicon substrate 11 with a liquid material 12 containing a polymerizable material, a second step for forming a polymer film 12a on one surface of the single crystal silicon substrate 11 by polymerizing the liquid material 12, a third step for forming a plurality of apertures 13 in the polymer film 12a by laser processing, a fourth step for forming an uneven shape 15 on the surface of the single crystal silicon substrate 11 by etching the one surface of the single crystal silicon substrate 11 by anisotropic wet etching through the apertures 13 on the etching conditions that the polymer film 12a has a tolerance, and a fifth step for removing the polymer film 12a.
申请公布号 JP2013171865(A) 申请公布日期 2013.09.02
申请号 JP20120033054 申请日期 2012.02.17
申请人 MITSUBISHI ELECTRIC CORP 发明人 YURA SHINSUKE;KATSURA TOMOTAKE;NAKAMURA REONA;TANIGAKI TAKESHI
分类号 H01L31/04 主分类号 H01L31/04
代理机构 代理人
主权项
地址