| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that allows improving electron injection efficiency and hole injection efficiency.SOLUTION: The semiconductor device includes: a semiconductor substrate; a first insulating film 111 provided on the semiconductor substrate; an interlayer film 115 composed of a microcrystal film 112 and a second insulating film 113 having a smaller energy barrier than the first insulating film 111, and provided on the first insulating film 111; a third insulating film 114 provided on the interlayer film 115; and a charge storage film 12 provided on the third insulating film 114. A method of manufacturing the semiconductor device includes the steps of: providing the first insulating film 111 on the semiconductor substrate; and providing, on the first insulating film 111, the interlayer film 115 including the microcrystal film 112 and the second insulating film 113 having a smaller energy barrier than the energy barrier in a conduction band and a valence band of the first insulating film 111. |
