| 摘要 |
A probe structure and a method for manufacturing the probe structure are provided to perform easily bonding by utilizing metal diffusion bonding technology when a support main body is coupled with a support beam. In a method for manufacturing the probe structure for electrical test of a semiconductor IC(Integrated Circuit) formed on a wafer, a support main body for mechanical supporter is formed between a lower substrate and a support beam on the lower substrate. A support beam for connecting the support main body and probe tips(75) is formed on an upper substrate. The support main body and the support beam are bonded. The probe tips are formed to contact directly to an inspection portion of a target element on the support beam irrespective of the upper substrate. |
